A sub-40-mHz-linewidth laser based on a silicon single-crystal optical cavity
نویسندگان
چکیده
منابع مشابه
Compact narrow-linewidth integrated laser based on a low-loss silicon nitride ring resonator.
We design and demonstrate a compact, narrow-linewidth integrated laser based on low-loss silicon nitride waveguides coupled to a III-V gain chip. By using a highly confined optical mode, we simultaneously achieve compact bends and ultra-low loss. We leverage the narrowband backreflection of a high-Q microring resonator to act as a cavity output mirror, a single-mode filter, and a propagation de...
متن کاملUnidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser.
A heterogeneously integrated widely tunable III-V-on-silicon ring laser with unidirectional operation is demonstrated. 40 nm tuning range (from 1560 nm to 1600 nm) is obtained using the Vernier effect between two ring resonators incorporated in the ring laser cavity. Unidirectional operation is obtained by integrating a DBR reflector coupling the clockwise and counterclockwise mode of the ring ...
متن کاملVii. Quantum Electronics
The primary objective in this program is the development of an extremely stable, low-jitter, single-frequency cw dye laser for use in a variety of applications such as optical communication and ultrahigh-resolution spectroscopy, and for studying fundamental interactions between radiation and matter. During the past year we have been concerned with the short-term stabilization of commercially av...
متن کاملUsing Narrow-Linewidth Lasers for Rapidly Tunable Microwave Signal Generators
Narrow-linewidth lasers are a key component of photonic microwave signal generators, as the width of the generated RF signal is equal to the beat note of used lasers. Heterogeneous silicon photonics platform opens up a possibility of improving the coherence of fully integrated photonic microwave generators by providing means to separate the photon resonator and absorbing active medium; improvin...
متن کاملOptical field enhancement factor of Silicon and indium phosphide nano-cavities
Nano cavities based on silicon and indium phosphide materials have been comparedin this study, considering field intensity enhancement factor. The results of FDTD based simulations declare that the Si nano-cavity improves confined optical field about 7.7 times higher than the InP based nano-cavity. The introduced dielectric nano-cavities support resonance wavelength at about λ=1.55 μm.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012